Growth of AgInS2 thin films by ultrasonic spray pyrolysis technique
Identifieur interne : 000117 ( Main/Repository ); précédent : 000116; suivant : 000118Growth of AgInS2 thin films by ultrasonic spray pyrolysis technique
Auteurs : RBID : Pascal:14-0084419Descripteurs français
- Pascal (Inist)
- Mécanisme croissance, Couche mince, Pyrolyse, Argent, Sulfure d'indium, Dépendance température, Croissance film, Analyse structurale, Réseau orthorhombique, Orientation préférentielle, Spectrométrie Raman, Structure chalcopyrite, Conductivité électrique, Grosseur grain, Bande interdite, Propriété électronique, Coefficient absorption, Résistivité couche, Dopage, Chalcopyrite, Densité porteur charge, AgInS2, 6855A, 6855J, 7361, 7320.
- Wicri :
English descriptors
- KwdEn :
- Absorption coefficients, Carrier density, Chalcopyrite, Chalcopyrite structure, Doping, Electrical conductivity, Electronic properties, Energy gap, Film growth, Grain size, Growth mechanism, Indium sulfide, Orthorhombic lattices, Preferred orientation, Pyrolysis, Raman spectroscopy, Sheet resistivity, Silver, Structural analysis, Temperature dependence, Thin films.
Abstract
Silver Indium Di-sulfide (AgInS2) thin films are deposited using ultrasonic spray pyrolysis technique and the effect of substrate temperature (Ts) on film growth is studied by varying the temperature from 250 to 400 °C. From the structural analysis, orthorhombic AgInS2 phase is identified with preferential orientation along (002) plane. Further analysis with Raman revealed the coexistence of Cu-Au ordered and chalcopyrite structures in the films. Stoichiometric films are obtained at Ts of 300 °C. Above 300 °C, the film conductivity changed from p to n-type and the grain size decreased. The band gap of AgInS2 films varied from 1.55 to 1.89 eV and absorption coefficient is found to be>104cm-1. The films have sheet resistance in the range of 0.05 to 1300Ω/ss. Both p and n type films are prepared through this technique without any external doping.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Growth of AgInS<sub>2</sub> thin films by ultrasonic spray pyrolysis technique</title><author><name sortKey="Anantha Sunil, M" uniqKey="Anantha Sunil M">M. Anantha Sunil</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Energy and Health Monitoring Instrumentation Laboratory, Department of Instrumentation & Applied Physics, Indian Institute of Science</s1><s2>Bangalore 560012</s2><s3>IND</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Inde</country><wicri:noRegion>Bangalore 560012</wicri:noRegion></affiliation></author><author><name sortKey="Deepa, K G" uniqKey="Deepa K">K. G. Deepa</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Energy and Health Monitoring Instrumentation Laboratory, Department of Instrumentation & Applied Physics, Indian Institute of Science</s1><s2>Bangalore 560012</s2><s3>IND</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Inde</country><wicri:noRegion>Bangalore 560012</wicri:noRegion></affiliation></author><author><name sortKey="Nagaraju, J" uniqKey="Nagaraju J">J. Nagaraju</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Energy and Health Monitoring Instrumentation Laboratory, Department of Instrumentation & Applied Physics, Indian Institute of Science</s1><s2>Bangalore 560012</s2><s3>IND</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Inde</country><wicri:noRegion>Bangalore 560012</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">14-0084419</idno><date when="2014">2014</date><idno type="stanalyst">PASCAL 14-0084419 INIST</idno><idno type="RBID">Pascal:14-0084419</idno><idno type="wicri:Area/Main/Corpus">000091</idno><idno type="wicri:Area/Main/Repository">000117</idno></publicationStmt><seriesStmt><idno type="ISSN">0040-6090</idno><title level="j" type="abbreviated">Thin solid films</title><title level="j" type="main">Thin solid films</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Absorption coefficients</term><term>Carrier density</term><term>Chalcopyrite</term><term>Chalcopyrite structure</term><term>Doping</term><term>Electrical conductivity</term><term>Electronic properties</term><term>Energy gap</term><term>Film growth</term><term>Grain size</term><term>Growth mechanism</term><term>Indium sulfide</term><term>Orthorhombic lattices</term><term>Preferred orientation</term><term>Pyrolysis</term><term>Raman spectroscopy</term><term>Sheet resistivity</term><term>Silver</term><term>Structural analysis</term><term>Temperature dependence</term><term>Thin films</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Mécanisme croissance</term><term>Couche mince</term><term>Pyrolyse</term><term>Argent</term><term>Sulfure d'indium</term><term>Dépendance température</term><term>Croissance film</term><term>Analyse structurale</term><term>Réseau orthorhombique</term><term>Orientation préférentielle</term><term>Spectrométrie Raman</term><term>Structure chalcopyrite</term><term>Conductivité électrique</term><term>Grosseur grain</term><term>Bande interdite</term><term>Propriété électronique</term><term>Coefficient absorption</term><term>Résistivité couche</term><term>Dopage</term><term>Chalcopyrite</term><term>Densité porteur charge</term><term>AgInS2</term><term>6855A</term><term>6855J</term><term>7361</term><term>7320</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Argent</term><term>Dopage</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Silver Indium Di-sulfide (AgInS<sub>2</sub>) thin films are deposited using ultrasonic spray pyrolysis technique and the effect of substrate temperature (T<sub>s</sub>) on film growth is studied by varying the temperature from 250 to 400 °C. From the structural analysis, orthorhombic AgInS<sub>2</sub> phase is identified with preferential orientation along (002) plane. Further analysis with Raman revealed the coexistence of Cu-Au ordered and chalcopyrite structures in the films. Stoichiometric films are obtained at T<sub>s</sub> of 300 °C. Above 300 °C, the film conductivity changed from p to n-type and the grain size decreased. The band gap of AgInS<sub>2</sub> films varied from 1.55 to 1.89 eV and absorption coefficient is found to be>10<sup>4</sup>cm<sup>-1</sup>. The films have sheet resistance in the range of 0.05 to 1300Ω/ss. Both p and n type films are prepared through this technique without any external doping.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0040-6090</s0></fA01><fA02 i1="01"><s0>THSFAP</s0></fA02><fA03 i2="1"><s0>Thin solid films</s0></fA03><fA05><s2>550</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Growth of AgInS<sub>2</sub> thin films by ultrasonic spray pyrolysis technique</s1></fA08><fA11 i1="01" i2="1"><s1>ANANTHA SUNIL (M.)</s1></fA11><fA11 i1="02" i2="1"><s1>DEEPA (K. G.)</s1></fA11><fA11 i1="03" i2="1"><s1>NAGARAJU (J.)</s1></fA11><fA14 i1="01"><s1>Energy and Health Monitoring Instrumentation Laboratory, Department of Instrumentation & Applied Physics, Indian Institute of Science</s1><s2>Bangalore 560012</s2><s3>IND</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA20><s1>71-75</s1></fA20><fA21><s1>2014</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>13597</s2><s5>354000505786170120</s5></fA43><fA44><s0>0000</s0><s1>© 2014 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>26 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>14-0084419</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Thin solid films</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>Silver Indium Di-sulfide (AgInS<sub>2</sub>) thin films are deposited using ultrasonic spray pyrolysis technique and the effect of substrate temperature (T<sub>s</sub>) on film growth is studied by varying the temperature from 250 to 400 °C. From the structural analysis, orthorhombic AgInS<sub>2</sub> phase is identified with preferential orientation along (002) plane. Further analysis with Raman revealed the coexistence of Cu-Au ordered and chalcopyrite structures in the films. Stoichiometric films are obtained at T<sub>s</sub> of 300 °C. Above 300 °C, the film conductivity changed from p to n-type and the grain size decreased. The band gap of AgInS<sub>2</sub> films varied from 1.55 to 1.89 eV and absorption coefficient is found to be>10<sup>4</sup>cm<sup>-1</sup>. The films have sheet resistance in the range of 0.05 to 1300Ω/ss. Both p and n type films are prepared through this technique without any external doping.</s0></fC01><fC02 i1="01" i2="3"><s0>001B80A15A</s0></fC02><fC02 i1="02" i2="3"><s0>001B60H55J</s0></fC02><fC02 i1="03" i2="3"><s0>001B70C61</s0></fC02><fC02 i1="04" i2="3"><s0>001B70C20</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Mécanisme croissance</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Growth mechanism</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Mecanismo crecimiento</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Couche mince</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Thin films</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Pyrolyse</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Pyrolysis</s0><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Argent</s0><s2>NC</s2><s5>04</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Silver</s0><s2>NC</s2><s5>04</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Sulfure d'indium</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>Indium sulfide</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Indio sulfuro</s0><s5>05</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Dépendance température</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Temperature dependence</s0><s5>06</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Croissance film</s0><s5>07</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Film growth</s0><s5>07</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Analyse structurale</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Structural analysis</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Análisis estructural</s0><s5>08</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Réseau orthorhombique</s0><s5>09</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Orthorhombic lattices</s0><s5>09</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Orientation préférentielle</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>Preferred orientation</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="SPA"><s0>Orientación preferencial</s0><s5>10</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Spectrométrie Raman</s0><s5>11</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Raman spectroscopy</s0><s5>11</s5></fC03><fC03 i1="12" i2="X" l="FRE"><s0>Structure chalcopyrite</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="ENG"><s0>Chalcopyrite structure</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="SPA"><s0>Estructura calcopirita</s0><s5>12</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Conductivité électrique</s0><s5>13</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Electrical conductivity</s0><s5>13</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Grosseur grain</s0><s5>14</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Grain size</s0><s5>14</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Bande interdite</s0><s5>29</s5></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Energy gap</s0><s5>29</s5></fC03><fC03 i1="16" i2="X" l="FRE"><s0>Propriété électronique</s0><s5>30</s5></fC03><fC03 i1="16" i2="X" l="ENG"><s0>Electronic properties</s0><s5>30</s5></fC03><fC03 i1="16" i2="X" l="SPA"><s0>Propiedad electrónica</s0><s5>30</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Coefficient absorption</s0><s5>31</s5></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Absorption coefficients</s0><s5>31</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>Résistivité couche</s0><s5>32</s5></fC03><fC03 i1="18" i2="3" l="ENG"><s0>Sheet resistivity</s0><s5>32</s5></fC03><fC03 i1="19" i2="X" l="FRE"><s0>Dopage</s0><s5>33</s5></fC03><fC03 i1="19" i2="X" l="ENG"><s0>Doping</s0><s5>33</s5></fC03><fC03 i1="19" i2="X" l="SPA"><s0>Doping</s0><s5>33</s5></fC03><fC03 i1="20" i2="3" l="FRE"><s0>Chalcopyrite</s0><s5>34</s5></fC03><fC03 i1="20" i2="3" l="ENG"><s0>Chalcopyrite</s0><s5>34</s5></fC03><fC03 i1="21" i2="3" l="FRE"><s0>Densité porteur charge</s0><s5>35</s5></fC03><fC03 i1="21" i2="3" l="ENG"><s0>Carrier density</s0><s5>35</s5></fC03><fC03 i1="22" i2="3" l="FRE"><s0>AgInS2</s0><s4>INC</s4><s5>46</s5></fC03><fC03 i1="23" i2="3" l="FRE"><s0>6855A</s0><s4>INC</s4><s5>71</s5></fC03><fC03 i1="24" i2="3" l="FRE"><s0>6855J</s0><s4>INC</s4><s5>72</s5></fC03><fC03 i1="25" i2="3" l="FRE"><s0>7361</s0><s4>INC</s4><s5>73</s5></fC03><fC03 i1="26" i2="3" l="FRE"><s0>7320</s0><s4>INC</s4><s5>74</s5></fC03><fN21><s1>118</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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